Silicon Chloride Layer / surface reaction layer

http://www.cise.columbia.edu/herman/plasmapubl~1.htm
Herman, Donnelly's work

3024 J. Vac. Sci. Technol. A 15(6), Nov/Dec 1997

Layadi et al.[9] also found that the relative coverages of SiClx integrated over depth was [SiCl]:[SiCl2]:[SiCl3] = 1:0.34:0.087 at 40 eV ion energy and 1:0.33:0.13 at 280 eV ion energy. In the heavily chlorinated 1-2 monolayers near the surface. Chlorine was observed even deeper below the surface, to 〜13 Å for 40 eV ion energy and 〜25 Å for 280 eV, predominantly as SiCl, which is consistent with the simulation by Barone and Graves.[8]

[9] N. Layadi, V. M. Donnelly, and J. T. C. Lee, J. Appl. Phys. 81, 6738(1997).