physical damage charging damage radiation damage

http://www.propulsion.kuaero.kyoto-u.ac.jp/

薄膜工学／丸善 p-82 ターゲットを衝撃するイオンエネルギーにあまり依存せず、スパッタ粒子のエネルギーは１５eV付近にピークを持つ分布をしている／入射角度によってピーク位置が高エネルギー側にシフトする 薄膜作成応用ハンドブック p-307 スパッタ粒子…

日立製作所が開発した、UHF波(極超短波)と磁場との共鳴現象を利用し、中密度で低圧のプラズマを安定かつ均一に生成する技術。 【マルチメディア・インターネット事典】 http://www.jiten.com/dicmi/docs/u/11860.htm

Plasma-etching processes for ULSI semiconductor circuits http://www.research.ibm.com/journal/rd/431/armacost.html↓regarding wet etching Ellipsometric study of the etch-stop mechanism in heavily doped silicon E. D. Palik, V. M. Bermudez and…

Observation of Microscopic Nonuniformity during Overetch in Polysilicon Gate Etching, Mutumi Tuda and Kouichi Ono, Jpn. J. Appl. Phys. Vol.36(1997) L518-L521Moreover, it was predicted that simultaneous surface-inhibitor deposition during e…

http://www.ece.ogi.edu/passsschedule The introduction of fluorine via CF4 to a typical HBr/Cl2/O2 polysilicon etch process suppresses the formation of SiOxBry or SiOxCly via formation of volatile SiF4. O2を加えたプラズマにさらにCF4を添加し…

その場エッチング・再成長プロセスによるエッチ側面コート付きの場合と再成長プロセスを省いた場合(As etch)のフォトルミネセンスの相対強度とライフタイム。 http://www.etl.go.jp/jp/results/bulletin/pdf/64-3/10ogura.pdf

平均滞在時間と時定数 物質の出入りする系を考えるとき、「現存量 / 時間あたりの出入りの量」で求まる時間の値を、「平均滞在(滞留)時間」という。これは平均であって、個々の分子の滞在時間は、それより長いことも短いこともある。 http://web.sfc.keio.ac…

Langmuir adsorption modelσ_s(∂Θ/∂t) = S_n Γ_n (1 - Θ) - Y_total Γ_iΘσ_s: surface site areal density Y_total = x Y_sn + Y_nx : 表面層の塩素の組成（SiClx） Y_sn : etch yield Y_n : neutral の sputter yieldK. Ono, M. Tuda, Thin Solid Films, 20…

Although the sticking coefficient of SiCl4 on Si surfaces is known to be small, Sp surface, the redeposition of etch products is negligible during etching as shown in Fig. 6a. However, the redissociation of SiCl4 into unsaturated species S…

in Molecular dynamics simulationa three-body term provides an energy penalty when the configuration of three neighboring atoms departs significantly from a diamond lattice, i.e., when the three-body angle 109°. → すなわち、３体ポテンシャル…

Surface smoothing by energetic cluster impact Oliver Rattunde Results for both surface roughness and power spectrum can be quantitatively explained by a recently developed mesoscopic model for the ECI (energetic cluster impact deposition) …

University of Antwerp (UA) Department of Chemistry, Micro- and Trace Analysis Centre PLASMANT http://webhost.ua.ac.be/plasma/

Semiconductor International 12/1/1997 Abstract: Remote Plasma Clean chemical vapor deposition (CVD) cleaning technology converts thesource gas to active atoms in a plasma located upstream in the process chamber. http://www.reed-electronics…

Si–Cl 86 Si–O 110 http://www.cem.msu.edu/~reusch/VirtualText/react2.htmBulk Si-Cl bonds in SiO2 are not easily formed [32,33], since the Si-O binding energy of 8.3+-0.1 eV is larger than the 4.2 eV binding energy Si-Cl [34]. Nishikawa, Oom…

Publishing with Elsevier Guide for Authors http://authors.elsevier.com/JournalDetail.html?PubID=357&Precis=&popup=

徳山 巍 (著) http://www.amazon.co.jp/exec/obidos/ASIN/4782856288/qid%3D1117022520/249-3692855-2789146 http://www.e-hon.ne.jp/bec/SA/Detail?refShinCode=0100000000000018738904&Action_id=121&Sza_id=B0

C4F8の代替ガスとして注目されているC4F6 (F2C=CF-CF=CF2)を用いたドライエッチングプロセスに関する基礎研究を行っております． http://annex.jsap.or.jp/plasma/No.33/33-p9.htm

Since the neutrals were assumed to be thermally equilibrated with the feature surface, the trajectories of neutral species that are scattered were calculated assuming a cosine distribution about the surface normal. A four-point technique w…

ミクロ熱流動研究部門 電子気体流研究分野 Gaseous Electronics Laboratory http://www.ifs.tohoku.ac.jp/divisions/jp/ncfhtd_gel.html http://www.ifs.tohoku.ac.jp/plasma/

April 11-13, 2005 Kyoto University Clock Tower Centennial Hall, Kyoto, Japan http://www.imfedk.org/

2005 International Conference on Simulation of Semiconductor Processes and Devices http://www6.eie.eng.osaka-u.ac.jp/sispad/ http://homepage1.nifty.com/ieeetokyo/chapter/ed/2005/20050131_sispad.html

A typical assumption is that all ions impacting feature surfaces with θi above a critical value θc are reflected specularly. Typical values for θc are >= 70° from the surface normal.[8,9] The ion scattering from the surface has been modele…

In the absence of experimental information on Cl+ scattering on a chlorinated SiO2 surface, only specular scattering at incident angles θi > θcr (forward reflection) will be considered in our simulation, with a scattering probability Pd gi…

（SPSM-18，東大，山上会館）が開催されます。発表申し込み，論文投稿に関しては近日中に掲載します。 2005年6月28-29日 http://streamer.t.u-tokyo.ac.jp/%7espsm18/spsm18.html http://www.chemenv.titech.ac.jp/watanabe/

http://www.tcsc.nifs.ac.jp/icnsp/index.html

酸化膜残渣の分布 http://www.sijapan.com/content/0501vol2/features/f0501_1img/f1_fig3.html 半導体メーカーの凋落とエンジニア退職との関係 http://www.sijapan.com/content/0511vol2/edit/edit_0511.html

http://www.ad-tech.co.jp/ http://www.ad-tech.co.jp/08_06PROCOM.html

デュアル・ダマシン・プロセス dual damocene prodess http://www2.nsknet.or.jp/~azuma/i/ic02.htm