Si etching rate dependence on the O2 flow rate
during normal Si etching is plotted in Fig. 11. / Furthermore, we observed discoloration or a rough surface with abnormal etching.
Jpn. J. Appl. Phys. Vol. 32 (1993) 1253-1258 MORIMOTO Influence of Reaction Products on Si Gate Etching with a Photoresist Mask in HBr O2 and Cl2 O2 Electron Cyclotron Resonance Plasma