2004-09-24から1日間の記事一覧
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Three-dimensional simulation of ion-enhanced dry-etch processes Microelectronic Engineering, Volume 14, Issues 3-4, September 1991, Pages 269-281 Joachim PelkaControlled topography production—true 3D simulation and experiment • ARTICLE Vac…
2002, Mahorowala et al. The domain was discretized into square cells with 25 A sides. → yield を計算する際のconstantの値は?Etch yield と Etch rate (Er=Δh/Δt)の関係 NΔh = Y ΓΔt N: 原子密度/ Y: yield
このschemeにおいては実施できなかったことを記述する。(as a favor, or a memo for myself)
2002, KousakaThe damping rates and wave numbers obtained numerically are compared with the theoretical values estimated using the dispersion relation of guided electromagnetic waves, to confirm the validity of FDTD simulations. 従来の手法…